n-Type naphthalimide-indole derivative for electronic applications
نویسندگان
چکیده
Abstract The fabrication of diodes using organic semiconductors as active materials has gained wide interest, and undergone significant progress in the past few decades. A naphthalimide-indole derivative (BNIA) was synthesized through bromination acenaphthene, subsequent oxidation, finally imidation with indole-3-acetic anhydride. molecular structure characterized NMR IR spectroscopy. BNIA displayed good thermal stability up to 300 °C an electrochemical band gap 1.07 eV. theoretical studies were performed support experimental findings. electrical parameter values dielectric measurement directed towards suitability a functional material electronic devices. diode successfully constructed n -type ideality factor 8.13, parameters are analyzed.
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ژورنال
عنوان ژورنال: Journal of Materials Science: Materials in Electronics
سال: 2023
ISSN: ['1573-482X', '0957-4522']
DOI: https://doi.org/10.1007/s10854-023-09827-4